SOLID-STATE ELECTRONICS

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.Important: Given the wide availability of TCAD simulation packages (Synopsys, Silvaco, etc.) device simulation papers should be coupled with experiment, revolutionary concepts or novel analytical approaches. Papers on materials growth and characterization should be relevant to a current or future device technology.Types of contributions: Original research papers, letters (intended for high-impact and high-quality short papers) and invited review papers (please contact the editors prior to submission). Solid-State Electronics does not publish notes or brief communications.Keywords: solid state electronics, field effect transistor, semiconductor (Si, SOI, Ge, III-V, 2D, etc.), nano-devices, new device concepts, fabrication, characterization, modeling, memories, high-voltage devices, photovoltaics, MEMS/NEMS

SOLID-STATE ELECTRONICS期刊中文简介

本杂志的宗旨是将下列领域的最新和原创研究成果汇集在一份刊物上发表:(1)固态物理和技术在电子和光电子领域的应用，包括理论和器件设计，并提供适当的实验支持;(2)光学、电学、形态表征技术和参数提取技术，并将实验应用于实际器件;(3)器件的制作与合成，包括器件相关新材料的生长、光电表征及性能评价;(4)亚微米、纳米微电子、光电子器件的物理建模，包括加工、测量、性能评价;(5)具有适当实验备份的固态器件和工艺的建模和仿真;(6)用于各种应用的纳米电子和光电子器件，包括光电、传感、微和纳米机械(MEMS/NEMS)系统、量子计算和通信。重要提示:鉴于TCAD仿真包(Synopsys、Silvaco等)的广泛可用性，设备仿真论文应与实验、革命性概念或新的分析方法相结合。关于材料生长和表征的论文应该与当前或未来的器件技术相关。投稿类型:原创研究论文、信函(面向高影响力、高质量的短篇论文)、邀请评审论文(投稿前请联系编辑)。固态电子学不发表笔记或简短的通讯。关键词:固态电子，场效应晶体管，半导体(Si, SOI, Ge, III-V, 2D等)，纳米器件，新器件概念，制造，表征，建模，记忆，高压器件，光伏，MEMS/NEMS